აღწერა
Kingston DDR4, 2666mhz, 8GB, SO-DIMM
SPECIFICATIONS
CL(IDD)————- 19 cycles
Row Cycle Time (tRCmin)——–45.75ns(min.)
Refresh to Active/Refresh———-350ns(min.)
Command Time (tRFCmin)——– 350ns(min.)
Row Active Time (tRASmin)——–32ns(min.)
Maximum Operating Power———TBD W*
UL Rating—— 94 V – 0
Operating Temperature——- 0C to +85oC
Storage Temperature ———- -55oC to +100oC
FEATURES
Power Supply: VDD = 1.2V Typical
• VDDQ = 1.2V Typical
• VPP = 2.5V Typical
• VDDSPD = 2.2V to 3.6V
• Nominal and dynamic on-die termination (ODT) for
data, strobe, and mask signals
• Low-power auto self refresh (LPASR)
• Data bus inversion (DBI) for data bus
• On-die VREFDQ generation and calibration
• Single-rank
• On-board I2 serial presence-detect (SPD) EEPROM
• 16 internal banks; 4 groups of 4 banks each
• Fixed burst chop (BC) of 4 and burst length (BL) of 8
via the mode register set (MRS)
• Selectable BC4 or BL8 on-the-fly (OTF)
• Fly-by topology
• Terminated control command and address bus
• PCB: Height 1.18” (30.00mm)
• RoHS Compliant and Halogen-Free
მიმოხილვა
მიმოხილვები ჯერ არ არის.